Effects of buried layers doping rate on substrate noise coupling: efficiency of deep-trench techniques to improve isolation capability

Abstract

In this paper a full wave investigation of the dependence of substrate noise coupling and of deep-trench techniques efficiency on buried epitaxial layers doping rates is presented. Different grounding configurations for the buried epitaxial layers are considered to estimate the impact of spatial distribution of ground contacts on the global isolation performance between sensitive blocks. Single and double oxide deep-trenches are introduced to reduce substrate noise coupling and demonstrate significant isolation capability. Simulation results obtained using a home made simulator are successfully compared to published measurements and to commercial design tools.