{"title":"An electrostatic microresonant power conversion device","authors":"J. M. Noworolski, S. Sanders","doi":"10.1109/PESC.1992.254775","DOIUrl":null,"url":null,"abstract":"An electrostatically driven microstructure suitable for use in a monolithic resonant DC-DC converter is presented. The device can be manufactured using existing integrated circuit processing techniques, permitting integration with, switching devices in silicon. The mechanical resonant structure is used in place of an LC tank and in place of a transformer, avoiding the complexity of manufacturing integrated magnetic elements. A monolithic resonant converter using this technology offering high power density is proposed. The device can potentially be driven in a zero-voltage-switched (ZVS) mode, scaling well to higher operating frequencies.<<ETX>>","PeriodicalId":402706,"journal":{"name":"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1992.254775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
An electrostatically driven microstructure suitable for use in a monolithic resonant DC-DC converter is presented. The device can be manufactured using existing integrated circuit processing techniques, permitting integration with, switching devices in silicon. The mechanical resonant structure is used in place of an LC tank and in place of a transformer, avoiding the complexity of manufacturing integrated magnetic elements. A monolithic resonant converter using this technology offering high power density is proposed. The device can potentially be driven in a zero-voltage-switched (ZVS) mode, scaling well to higher operating frequencies.<>
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