Genetic algorithm based diode model prameters extraction

B. Almashary
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引用次数: 2

Abstract

In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model parameters. Saturation current, ideality factor, and series resistance are extracted without a need for initial conditions. The proposed technique is found to be robust and capable to reach a solution that is characterized to be global and accurate. Compared with existing conventional techniques, the proposed one shows superior performance in terms of accuracy and being generic and applicable to extract parameters of other devices. The proposed technique performance has been tested using theoretical data, and used to extract real device parameters from its measured I-V characteristics.
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基于遗传算法的二极管模型参数提取
本文提出并实现了一种基于遗传的二极管电路模型参数提取算法。饱和电流、理想因数和串联电阻无需初始条件即可提取。结果表明,该方法鲁棒性好,求解结果具有全局性和准确性。与现有的传统方法相比,该方法在提取精度、通用性和适用性等方面均有较好的表现。所提出的技术性能已经用理论数据进行了测试,并用于从其测量的I-V特性中提取实际器件参数。
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