P. K. Tse, J. Gammel, D. Schimmel, W. H. Becker, J. P. Ballantyne, T. J. Riley
{"title":"Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays","authors":"P. K. Tse, J. Gammel, D. Schimmel, W. H. Becker, J. P. Ballantyne, T. J. Riley","doi":"10.1109/IRPS.1986.362121","DOIUrl":null,"url":null,"abstract":"We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1986.362121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.
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