Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

Abstract

This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters LP and L2 in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (Dntop) increases from 0.8 × cm⁻² to 1.2 × cm⁻², progressive performance with Fß from 805 V to 711 V and Ron, sp from 86.49 mΩ· cm² to 80.56 mΩ·cm² is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.