A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

F. Alimenti, M. Borgarino, R. Codeluppi, V. Palazzari, M. Pifferi, L. Roselli, A. Scorzoni, F. Fantini
{"title":"A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology","authors":"F. Alimenti, M. Borgarino, R. Codeluppi, V. Palazzari, M. Pifferi, L. Roselli, A. Scorzoni, F. Fantini","doi":"10.1109/EMICC.2006.282661","DOIUrl":null,"url":null,"abstract":"This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm
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一种采用0.35μm Si/SiGe BiCMOS技术的5GHz单片WLAN发射机
本文研究了一种国内应用的5GHz无线局域网外差发射机的设计。该发射机采用商用0.35μm Si/SiGe BiCMOS技术实现,目的是在降低成本的同时实现高集成度。在低成本FR4印刷电路板上进行的原型线键合测量显示,总体线性增益为14dB,输入参考压缩点为-6.5dBm,三阶输入截距点为+2.7dBm
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