{"title":"Device Failure from the Initial Current Step of a CDM Discharge","authors":"D. Johnsson, K. Domanski, H. Gossner","doi":"10.23919/eos/esd.2018.8509779","DOIUrl":null,"url":null,"abstract":"CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eos/esd.2018.8509779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.
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