N. Miller, Michael Elliott, R. Gilbert, E. Arkun, D. Denninghoff
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引用次数: 5
Abstract
This paper presents for the first time an accurate ASM-HEMT model for millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements. The accurate model is used to predict the optimal performance of a GaN HEMT with operating conditions beyond the limitations of the scalar W-band load-pull system. The GaN HEMT measurements exhibits a peak PAE of 35% and the ASMHEMT model predicts a peak PAE of 42%.
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