Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896529
C. Esposito, C. De Martino, S. Lehmann, Z. Zhao, S. Mothes, C. Kretzschmar, M. Schröter, M. Spirito
In this contribution, We analyze the bandwidth versus accuracy trade-offs of conventional two-step de-embedding approaches, often employed to extract the device model parameters. The accuracy limitation of incorporating the pad/line section of classical DUT test-fixtures into shunt-series complex and frequency-dependent elements is analyzed by means of linear circuit simulations and EM parametric analysis. The de-embedding accuracy is then evaluated by employing 3D surfaces to include both the frequency and the geometrical dependency. To validate the presented analysis, classical device monitoring parameters are extracted versus frequency for the same nMOS device embedded in two different fixtures. One topology only supports pad level calibration, thus including the fixture pad/line section in the de-embedding process. The second topology allows a direct on-Wafer calibration (reference plane set on metal-1 in close proximity to the DUT) thus minimizing the residual parasitics to be removed by the de-embedding step. Experimental data are then presented and compared to simulation test benches to highlight the improved consistency of the extracted model parameters of the metal-1 calibration approach up to 220GHz.
{"title":"Extending the Open-Short de-embedding frequency via metal-l on-wafer calibration approaches","authors":"C. Esposito, C. De Martino, S. Lehmann, Z. Zhao, S. Mothes, C. Kretzschmar, M. Schröter, M. Spirito","doi":"10.1109/arftg54656.2022.9896529","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896529","url":null,"abstract":"In this contribution, We analyze the bandwidth versus accuracy trade-offs of conventional two-step de-embedding approaches, often employed to extract the device model parameters. The accuracy limitation of incorporating the pad/line section of classical DUT test-fixtures into shunt-series complex and frequency-dependent elements is analyzed by means of linear circuit simulations and EM parametric analysis. The de-embedding accuracy is then evaluated by employing 3D surfaces to include both the frequency and the geometrical dependency. To validate the presented analysis, classical device monitoring parameters are extracted versus frequency for the same nMOS device embedded in two different fixtures. One topology only supports pad level calibration, thus including the fixture pad/line section in the de-embedding process. The second topology allows a direct on-Wafer calibration (reference plane set on metal-1 in close proximity to the DUT) thus minimizing the residual parasitics to be removed by the de-embedding step. Experimental data are then presented and compared to simulation test benches to highlight the improved consistency of the extracted model parameters of the metal-1 calibration approach up to 220GHz.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132047671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896586
N. Messaoudi, A. Ayed, J. Teyssier, S. Boumaiza
This paper presents a vector network analyzer(VNA) based testbed for accurate power amplifier (PA) linearizability testing under wideband modulated signals. The proposed testbed utilizes two of the VNA’s receivers to simultaneously capture the calibrated input and output signals of the PA. The testbed corrects the linear and nonlinear distortions exhibited by the underlying components (e.g., arbitrary waveform generator, up-converter, driver amplifiers, and couplers) so that the linearizability testing is solely indicative of the performance of the PA under test. Experiments conducted using two PA demonstrators confirmed the capacity of the proposed testbed to support digital predistortion based linearization testing under 5G NR OFDM test signals with modulation bandwidths (e.g., 200 MHz) that significantly exceed the VNA receivers bandwidth. More importantly, the pre-correction of the linear and nonlinear distortions yielded an improvement of the adjacent channel power ratios at the output of the PAs by up to 7 dB compared to the uncorrected case.
提出了一种基于矢量网络分析仪(VNA)的宽带调制信号下精确功率放大器线性化测试平台。所提出的测试平台利用两个VNA的接收器同时捕获校准后的PA输入和输出信号。测试平台校正底层组件(例如，任意波形发生器、上变频器、驱动放大器和耦合器)所表现出的线性和非线性失真，因此线性性测试仅表明被测PA的性能。使用两个PA演示器进行的实验证实了所提出的试验台的能力，可以在调制带宽(例如200 MHz)明显超过VNA接收器带宽的5G NR OFDM测试信号下支持基于数字预失真的线性化测试。更重要的是，与未校正的情况相比，线性和非线性失真的预校正使放大器输出的相邻通道功率比提高了7 dB。
{"title":"VNA-Based Testbed for Accurate Linearizability Testing of Power Amplifiers Under Modulated Signals","authors":"N. Messaoudi, A. Ayed, J. Teyssier, S. Boumaiza","doi":"10.1109/arftg54656.2022.9896586","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896586","url":null,"abstract":"This paper presents a vector network analyzer(VNA) based testbed for accurate power amplifier (PA) linearizability testing under wideband modulated signals. The proposed testbed utilizes two of the VNA’s receivers to simultaneously capture the calibrated input and output signals of the PA. The testbed corrects the linear and nonlinear distortions exhibited by the underlying components (e.g., arbitrary waveform generator, up-converter, driver amplifiers, and couplers) so that the linearizability testing is solely indicative of the performance of the PA under test. Experiments conducted using two PA demonstrators confirmed the capacity of the proposed testbed to support digital predistortion based linearization testing under 5G NR OFDM test signals with modulation bandwidths (e.g., 200 MHz) that significantly exceed the VNA receivers bandwidth. More importantly, the pre-correction of the linear and nonlinear distortions yielded an improvement of the adjacent channel power ratios at the output of the PAs by up to 7 dB compared to the uncorrected case.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114631793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/ARFTG54656.2022.9896519
A. Babenko, J. Martens
We have studied dependencies of the mixer linearity upon injecting a third local oscillator (LO) harmonic of various magnitudes and phases relative to the LO fundamental. Two packaged double-balanced-mixer samples from independent manufacturers were tested for two-tone third-order IM (IM3) products. The two-tone RF input signal covered a 13 GHz to 18 GHz frequency range with a 4 MHz tone spacing and with the LO 52 MHz above the lower RF input tone. For both samples and at select third LO harmonic phases, we observed around 4 dB average third-order input intercept point (IIP3) improvement across the entire frequency range, with about 5 dB increase at frequencies where IIP3 was below 20 dBm with purely sinusoidal LO. In contrast, certain harmonic phases resulted in more than 10 dB increase, compared to no injection, of the IM3 products that were also unstable over time. The results in this paper form the basis for further research toward optimal LO waveforms for improved broadband mixer linearity.
{"title":"Local-Oscillator Third-Harmonic Injection for Improved Broadband Mixer Linearity","authors":"A. Babenko, J. Martens","doi":"10.1109/ARFTG54656.2022.9896519","DOIUrl":"https://doi.org/10.1109/ARFTG54656.2022.9896519","url":null,"abstract":"We have studied dependencies of the mixer linearity upon injecting a third local oscillator (LO) harmonic of various magnitudes and phases relative to the LO fundamental. Two packaged double-balanced-mixer samples from independent manufacturers were tested for two-tone third-order IM (IM3) products. The two-tone RF input signal covered a 13 GHz to 18 GHz frequency range with a 4 MHz tone spacing and with the LO 52 MHz above the lower RF input tone. For both samples and at select third LO harmonic phases, we observed around 4 dB average third-order input intercept point (IIP3) improvement across the entire frequency range, with about 5 dB increase at frequencies where IIP3 was below 20 dBm with purely sinusoidal LO. In contrast, certain harmonic phases resulted in more than 10 dB increase, compared to no injection, of the IM3 products that were also unstable over time. The results in this paper form the basis for further research toward optimal LO waveforms for improved broadband mixer linearity.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116860940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896487
A. M. Angelotti, G. P. Gibiino, T. Nielsen, A. Santarelli, J. Verspecht
This work deals with the impact of broadband modulated excitations on the load-pull characterization of gallium nitride (GaN) on-wafer high-electron-mobility transistors (HEMTs). An experimental assessment is performed by comparing HEMT performance metrics obtained using typical continuous-wave (CW) load-pull characteristics (and their input-statistics weighted version) against the ones directly measured with a wideband active load-pull (WALP) system which allows to set a user-prescribed load profile across arbitrarily-wide measurement bandwidths (BWs). Experimental results across a 100-MHz WALP BW under realistic modulated input excitations at a 6 GHz carrier frequency are reported for a 150nm-gate-length GaN HEMT, highlighting the differences between the various load-pull measurement approaches.
{"title":"Impact of Broadband Modulation in Active Load-Pull On-Wafer Measurements of GaN HEMTs","authors":"A. M. Angelotti, G. P. Gibiino, T. Nielsen, A. Santarelli, J. Verspecht","doi":"10.1109/arftg54656.2022.9896487","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896487","url":null,"abstract":"This work deals with the impact of broadband modulated excitations on the load-pull characterization of gallium nitride (GaN) on-wafer high-electron-mobility transistors (HEMTs). An experimental assessment is performed by comparing HEMT performance metrics obtained using typical continuous-wave (CW) load-pull characteristics (and their input-statistics weighted version) against the ones directly measured with a wideband active load-pull (WALP) system which allows to set a user-prescribed load profile across arbitrarily-wide measurement bandwidths (BWs). Experimental results across a 100-MHz WALP BW under realistic modulated input excitations at a 6 GHz carrier frequency are reported for a 150nm-gate-length GaN HEMT, highlighting the differences between the various load-pull measurement approaches.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/ARFTG54656.2022.9896560
J. Kast, P. Manurkar, K. Remley, R. Horansky, Dylan F. Williams
We present a single-instrument solation to traceable mmWave wide-band modulated-signal measurement in OTA test environments. The approach can be used to characterize transmitters, receivers and transceivers using either time-domain or frequency-domain multiplexing on a fine frequency grid.
{"title":"Traceable mm Wave Modulated-Signal Measurements for OTA Test","authors":"J. Kast, P. Manurkar, K. Remley, R. Horansky, Dylan F. Williams","doi":"10.1109/ARFTG54656.2022.9896560","DOIUrl":"https://doi.org/10.1109/ARFTG54656.2022.9896560","url":null,"abstract":"We present a single-instrument solation to traceable mmWave wide-band modulated-signal measurement in OTA test environments. The approach can be used to characterize transmitters, receivers and transceivers using either time-domain or frequency-domain multiplexing on a fine frequency grid.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123357369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/ARFTG54656.2022.9896540
T. M. Wallis, Charles A. E. Little, R. Chamberlin, G. Burton, N. Orloff, C. Long, K. Sertel
We investigate on-wafer measurements made by use of a non-contact probe station in the WR1.5 band (500 GHz to 750 GHz) in order to demonstrate the potential utility of the self-defined, multireflect-thru (MRT) calibration technique. The propagation constant of the on-wafer, coplanar waveguide (CPW test environment is determined by use of the one-port, reduced reflectometer calibration method. The results of the one-port, calibrated, non-contact measurements are compared to two-port contact measurements calibrated with the multiline thru-reflect-line (TRL) method. The non-contact approach is shown to be promising for self-defined determination of the propagation constant, provided that steps in the CPW center conductor width and CPW gap are introduced into the calibration standards to suppress the coupled-slot-line (CSL) mode.
{"title":"Determination of the Coplanar Waveguide Propagation Constant via Non-contact, On-wafer Measurements in WR1.5 Band","authors":"T. M. Wallis, Charles A. E. Little, R. Chamberlin, G. Burton, N. Orloff, C. Long, K. Sertel","doi":"10.1109/ARFTG54656.2022.9896540","DOIUrl":"https://doi.org/10.1109/ARFTG54656.2022.9896540","url":null,"abstract":"We investigate on-wafer measurements made by use of a non-contact probe station in the WR1.5 band (500 GHz to 750 GHz) in order to demonstrate the potential utility of the self-defined, multireflect-thru (MRT) calibration technique. The propagation constant of the on-wafer, coplanar waveguide (CPW test environment is determined by use of the one-port, reduced reflectometer calibration method. The results of the one-port, calibrated, non-contact measurements are compared to two-port contact measurements calibrated with the multiline thru-reflect-line (TRL) method. The non-contact approach is shown to be promising for self-defined determination of the propagation constant, provided that steps in the CPW center conductor width and CPW gap are introduced into the calibration standards to suppress the coupled-slot-line (CSL) mode.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125371483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896585
N. Miller, Michael Elliott, R. Gilbert, E. Arkun, D. Denninghoff
This paper presents for the first time an accurate ASM-HEMT model for millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements. The accurate model is used to predict the optimal performance of a GaN HEMT with operating conditions beyond the limitations of the scalar W-band load-pull system. The GaN HEMT measurements exhibits a peak PAE of 35% and the ASMHEMT model predicts a peak PAE of 42%.
{"title":"Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment","authors":"N. Miller, Michael Elliott, R. Gilbert, E. Arkun, D. Denninghoff","doi":"10.1109/arftg54656.2022.9896585","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896585","url":null,"abstract":"This paper presents for the first time an accurate ASM-HEMT model for millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements. The accurate model is used to predict the optimal performance of a GaN HEMT with operating conditions beyond the limitations of the scalar W-band load-pull system. The GaN HEMT measurements exhibits a peak PAE of 35% and the ASMHEMT model predicts a peak PAE of 42%.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126088428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896574
D. Donahue, T. Barton
This paper presents a study of sampler configuration within a sampled-network reflectometer, an extension of the sampled-line. The sampled-network impedance sensing approach leverages a six- to four-port reduction technique that produces a graphical representation known as the w-plane. In this work, an experimental setup in which the samplers can be located near-arbitrarily within the network is used to explore the w-plane’s characteristics and relationship to the physical reflectometer.
{"title":"The w-Plane as a Graphical Representation of Sampler Configuration in a Sampled-Network Reflectometer","authors":"D. Donahue, T. Barton","doi":"10.1109/arftg54656.2022.9896574","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896574","url":null,"abstract":"This paper presents a study of sampler configuration within a sampled-network reflectometer, an extension of the sampled-line. The sampled-network impedance sensing approach leverages a six- to four-port reduction technique that produces a graphical representation known as the w-plane. In this work, an experimental setup in which the samplers can be located near-arbitrarily within the network is used to explore the w-plane’s characteristics and relationship to the physical reflectometer.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115103691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896558
Christoph Schulze, W. Heinrich, J. Dunsmore, O. Bengtsson
Vector corrected wideband measurements on a modified vector network analyzer system are presented using wideband modulated signals as stimulus. The modified system allows intermediate frequency (IF) bandWidths exceeding 5 GHz based on external wideband IF access, signal conditioning and digitalization. A combined RF and IF calibration has been developed that allows full-band calibration using CW excitation, while measurements are made with wideband modulated signals. Impedance measurements verify excellent accuracy at -59dB deviation for an electrically switched impedance which is only a few dB less than for narrowband measurements. Repeatability of calculated error terms for consecutive calibrations also show comparable performance as for narrow-band measurements. Wideband one-port impedance measurements at 12.5 GHz using a Schroeder signal with 500 MHz instantaneous bandwidth show less than -50dB deviation with coherent averaging even without correcting for mixer distortion.
{"title":"Wideband Vector Corrected Measurements on a Modified Vector Network Analyzer (VNA) System","authors":"Christoph Schulze, W. Heinrich, J. Dunsmore, O. Bengtsson","doi":"10.1109/arftg54656.2022.9896558","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896558","url":null,"abstract":"Vector corrected wideband measurements on a modified vector network analyzer system are presented using wideband modulated signals as stimulus. The modified system allows intermediate frequency (IF) bandWidths exceeding 5 GHz based on external wideband IF access, signal conditioning and digitalization. A combined RF and IF calibration has been developed that allows full-band calibration using CW excitation, while measurements are made with wideband modulated signals. Impedance measurements verify excellent accuracy at -59dB deviation for an electrically switched impedance which is only a few dB less than for narrowband measurements. Repeatability of calculated error terms for consecutive calibrations also show comparable performance as for narrow-band measurements. Wideband one-port impedance measurements at 12.5 GHz using a Schroeder signal with 500 MHz instantaneous bandwidth show less than -50dB deviation with coherent averaging even without correcting for mixer distortion.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116440241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-24DOI: 10.1109/arftg54656.2022.9896502
R. Sakamaki, R. Kishikawa, Y. Tojima, S. Kon, I. Somada, S. Matsui, G. Taoka, T. Yoshida, S. Amakawa, M. Fujishima
This paper demonstrates non-invasive probing measurement of transmission lines on CMOS chips from 100 MHz to 500 GHz. The surface of aluminum pads are covered with a natural oxide film, which usually needs to be penetrated by probe tips through extended skating. In this work, the oxide film is kept intact by reducing probe skating down to $10 mu m$ using a precision-controlled probe station. This, in turn, allowed the use of extremely small $20 mu mtimes 15mu m, 25-mu m-$ pitch pads. The oxide film did not show significant resistance variations even after repeated probe touchdowns that would normally have worn out the pads. Stability of the measurement was investigated by comparing measured propagation constant in a wide frequency range, covering 1-mm coax, WR6, WR3, and WR2 bands. The propagation constant turned out to be continuous even at band crossings. The non-invasive probing could be particularly useful for characterizing CMOS passive devices, which do not require DC biasing.
本文演示了在100 MHz至500 GHz的CMOS芯片上对传输线进行无创探测测量。铝垫的表面覆盖着一层天然的氧化膜，通常需要通过延伸滑冰的方式用探针尖端穿透。在这项工作中，通过使用精密控制的探针站将探针滑降至10美元/ μ m美元，从而保持氧化膜的完整。这反过来又允许使用极小的$20 mu m乘以15mu m，即$ 25 mu m-$间距垫。氧化膜没有显示出明显的电阻变化，即使在重复的探针触地后，通常会磨损垫。通过比较1 mm同轴、WR6、WR3和WR2频段宽频率范围内测量的传播常数，研究了测量的稳定性。即使在波段交叉处，传播常数也是连续的。非侵入式探测对于不需要直流偏置的CMOS无源器件的特性特别有用。
{"title":"Demonstration of non-invasive probing of CMOS devices with aluminum pads at frequencies up to 500 GHz","authors":"R. Sakamaki, R. Kishikawa, Y. Tojima, S. Kon, I. Somada, S. Matsui, G. Taoka, T. Yoshida, S. Amakawa, M. Fujishima","doi":"10.1109/arftg54656.2022.9896502","DOIUrl":"https://doi.org/10.1109/arftg54656.2022.9896502","url":null,"abstract":"This paper demonstrates non-invasive probing measurement of transmission lines on CMOS chips from 100 MHz to 500 GHz. The surface of aluminum pads are covered with a natural oxide film, which usually needs to be penetrated by probe tips through extended skating. In this work, the oxide film is kept intact by reducing probe skating down to $10 mu m$ using a precision-controlled probe station. This, in turn, allowed the use of extremely small $20 mu mtimes 15mu m, 25-mu m-$ pitch pads. The oxide film did not show significant resistance variations even after repeated probe touchdowns that would normally have worn out the pads. Stability of the measurement was investigated by comparing measured propagation constant in a wide frequency range, covering 1-mm coax, WR6, WR3, and WR2 bands. The propagation constant turned out to be continuous even at band crossings. The non-invasive probing could be particularly useful for characterizing CMOS passive devices, which do not require DC biasing.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130732095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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