SIMT-based Logic Layers for Stacked DRAM Architectures: A Prototype

C. Kersey, S. Yalamanchili, Hyesoon Kim
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引用次数: 3

Abstract

Stacked DRAM products are now available, and the likelihood of future products combining DRAM stacks with custom logic layers seems high. The near-memory processor in such a system will have to be energy efficient, latency tolerant, and capable of exploiting both high memory-level parallelism and high memory bandwidth. We believe that single-instruction-multiple-thread (SIMT) processors are uniquely suited to this task, and for the purpose of evaluating this claim have produced an FPGA-based prototype.
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基于simm的堆叠DRAM架构逻辑层:一个原型
堆叠式DRAM产品现在已经可用,而且未来产品将DRAM堆叠与定制逻辑层结合的可能性似乎很高。这种系统中的近内存处理器必须节能、容忍延迟,并且能够利用高内存级并行性和高内存带宽。我们认为单指令多线程(SIMT)处理器非常适合这项任务,为了评估这一说法,我们制作了一个基于fpga的原型。
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MEMST: Cloning Memory Behavior using Stochastic Traces Dynamic Memory Pressure Aware Ballooning Another Trip to the Wall: How Much Will Stacked DRAM Benefit HPC? E-ECC: Low Power Erasure and Error Correction Schemes for Increasing Reliability of Commodity DRAM Systems Inefficiencies in the Cache Hierarchy: A Sensitivity Study of Cacheline Size with Mobile Workloads
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