S. Goto, K. Fujii, H. Morishige, S. Suzuki, S. Sakamoto, N. Yoshida, N. Tanino, K. Sato
{"title":"A 100 W S-band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications","authors":"S. Goto, K. Fujii, H. Morishige, S. Suzuki, S. Sakamoto, N. Yoshida, N. Tanino, K. Sato","doi":"10.1109/GAAS.1998.722632","DOIUrl":null,"url":null,"abstract":"A 100 W low distortion AlGaAs-GaAs hetero-structure FET, which is the smallest package size ever reported, has been developed for TDMA and CDMA cellular base stations. The FET exhibited 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third order inter-modulation distortion (IMD3) and the power added efficiency (PAE) under two-tone test condition (/spl Delta/f=1 MHz) were -35 dBc and 24%, respectively at 42 dBm output power, of which the level was 8 dB back-off from saturation power. To reduce the cost and the space, the size of the chip and the package were miniaturized to 1.41/spl times/2.6 mm/sup 2/ and 17.4/spl times/24.0 mm/sup 2/, respectively by lengthening the gate finger.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A 100 W low distortion AlGaAs-GaAs hetero-structure FET, which is the smallest package size ever reported, has been developed for TDMA and CDMA cellular base stations. The FET exhibited 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third order inter-modulation distortion (IMD3) and the power added efficiency (PAE) under two-tone test condition (/spl Delta/f=1 MHz) were -35 dBc and 24%, respectively at 42 dBm output power, of which the level was 8 dB back-off from saturation power. To reduce the cost and the space, the size of the chip and the package were miniaturized to 1.41/spl times/2.6 mm/sup 2/ and 17.4/spl times/24.0 mm/sup 2/, respectively by lengthening the gate finger.
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