Limiting factors to the performance and operation frequency range of THz quantum cascade laser based on GaAs/AlGaAs heterostructures

PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019) Pub Date : 2021-06-22 DOI:10.1063/5.0054908

R. Khabibullin, N. Shchavruk, D. Ponomarev, Dmitrii Ushakov, A. A. Afonenko, O. Volkov, V. Pavlovskiy, K. V. Maremyanin, A. Dubinov

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Abstract

We have designed and fabricated 2.3 THz QCL with active module based on 4 QWs GaAs/Al0.15Ga0.85As. The light-current-voltage (L-I-V) characteristics and emission spectra of fabricated THz QCL are investigated. The nonmonotonic behavior of L–I characteristic and a large number of discontinuities in I-V characteristic is observed. Our calculations show that such electric instabilities are associated with the field inhomogeneity across the active region (electric field domains). We investigate transmission spectra of incident radiation of GaAs and AlGaAs/GaAs structures with two highly absorption optical response regions. Thus, to improve the performance and extend the operation frequencies of THz QCLs it is needed to develop new concepts of active region designs for avoiding the formation of electric field domains and employ novel material systems for lasing in the frequency range 8-11 THz.

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基于GaAs/AlGaAs异质结构的太赫兹量子级联激光器性能和工作频率范围的限制因素

我们设计并制作了基于4 QWs GaAs/ al0.15 ga0.85的2.3 THz QCL有源模块。研究了制备的太赫兹QCL的光电流-电压特性和发射光谱。观察到L-I特征的非单调性和I-V特征的大量不连续。我们的计算表明，这种电不稳定性与跨有源区域(电场域)的场不均匀性有关。研究了具有两个高吸收光响应区的GaAs和AlGaAs/GaAs结构入射辐射的透射光谱。因此，为了提高太赫兹qcl的性能和扩展工作频率，需要开发新的有源区域设计概念，以避免电场域的形成，并采用新的材料系统在8-11太赫兹的频率范围内进行激光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)

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