H. Noguchi, K. Ikegami, K. Abe, S. Fujita, Y. Shiota, T. Nozaki, S. Yuasa, Yoshishige Suzuki
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引用次数: 25
Abstract
This paper presents voltage controlled MRAM (VCM) with novel fast read/write circuits for nonvolatile ultra-large last level cache. Further, write error rate has dramatically been reduced by thermal stability factor control using “continuous read-write-verify” scheme. Read error rate has also improved with “read-disturb-free non-destructive-self-reference read” with unipolar write of VCM.
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