Thermoelectric properties of Yb-filled and Sn-compensated skutterudites

Jihui Yang, G. Meisner, Wei Chen, J. Dyck, C. Uher
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Abstract

The effect of alloying tin on the antimony site of ytterbium-filled skutterudites is examined. We performed measurements of Hall effect, electrical resistivity, Seebeck coefficient and thermal conductivity on the series Yb/sub 0.5/Co/sub 4/Sb/sub 12-x/Sn/sub x/, with x=0.5, 0.6, 0.8 and 0.83. We find that the substitution of tin does not alter the position of the Fermi level with respect to the conduction band of these heavily doped semiconducting samples, but rather it gives rise to a p-type band. Experimental data for x=0.83 can be understood in the context of a two-carrier electrical conduction. Thermal conductivity of these ytterbium-filled skutterudites is significantly suppressed with respect to the unfilled cobalt tri-antimonide.
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镱填充和锡补偿的方钨矿的热电性质
研究了合金锡对充镱滑石锑位的影响。我们测量了Yb/sub 0.5/Co/sub 4/Sb/sub 12-x/Sn/sub x/系列材料的霍尔效应、电阻率、塞贝克系数和导热系数,其中x=0.5、0.6、0.8和0.83。我们发现锡的取代并没有改变费米能级相对于这些重掺杂半导体样品的导带的位置,而是产生了p型带。x=0.83的实验数据可以在双载流子导电的背景下理解。相对于未填充的三锑化钴,这些填充了钇的方晶石的导热性明显受到抑制。
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