{"title":"Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications","authors":"Christopher I. Allen, J. Petrosky, P. L. Orlando","doi":"10.1109/NAECON.2014.7045835","DOIUrl":null,"url":null,"abstract":"This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10<sup>-3</sup> bit<sup>-1</sup>yr<sup>-1</sup>; at 2000 km altitude, the rate increases to 1.9×10<sup>1</sup> bit<sup>-1</sup>yr<sup>-1</sup>. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2014.7045835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10-3 bit-1yr-1; at 2000 km altitude, the rate increases to 1.9×101 bit-1yr-1. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.
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