Design and characterization of two color GaAs based quantum well infrared detector structures

1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI:10.1109/WOFE.1997.621150

J. Sánchez-Rojas, A. Guzmán, E. Muñoz, J.J. Sanchez, E. Calleja, A. Sanz-Hervás, C. Villar, M. Aguilar, M. Montojo, G. Vergara, L. J. Gomez

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Abstract

The choice of detector technology for infrared focal-plane arrays may be influenced by several factors as sensitivity, uniformity, array size, reproducibility, cost and integration possibilities. The material system GaAs/AlGaAs provides several advantages compared to the state-of-the-art II-VI semiconductor detectors, including the mature GaAs growth and processing technologies and the flexibility of energy band tailoring in QW's to operate at different atmospheric transmission windows. In this work we report the detailed design procedure of a tunable two-color photoconductive GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked Quantum Well Infrared Photodetector (QWIP). The structures are optimized to operate in the 3-5 /spl mu/m and 8-10 /spl mu/m windows, with peak detectivities at /spl sim/4 /spl mu/m and 9 /spl mu/m, respectively. A transfer-matrix method was used to estimate the subband energies of the structures according to the operating wavelength specifications. The effect of many-body corrections was also taken into account.

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两色GaAs基量子阱红外探测器结构的设计与表征

红外焦平面阵列探测器技术的选择可能受到灵敏度、均匀性、阵列尺寸、再现性、成本和集成可能性等因素的影响。与最先进的II-VI型半导体探测器相比，材料系统GaAs/AlGaAs提供了几个优势，包括成熟的GaAs生长和处理技术，以及QW在不同大气透射窗口下工作的能带裁剪灵活性。本文报道了可调谐双色光导GaAs/AlAs/AlGaAs和GaAs/AlGaAs堆叠量子阱红外探测器(QWIP)的详细设计过程。优化后的结构在3-5 /spl mu/m和8-10 /spl mu/m范围内工作，峰值探测率分别为/spl sim/4 /spl mu/m和9 /spl mu/m。根据工作波长规格，采用传递矩阵法估计结构的子带能量。还考虑了多体修正的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings

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