{"title":"A 216GHz 0.5mW transmitter with a compact power combiner in 65nm CMOS","authors":"Sriram Muralidharan, Kefei Wu, M. Hella","doi":"10.1109/APMC.2015.7413041","DOIUrl":null,"url":null,"abstract":"This paper presents the design and measurements of a 216GHz, 0.5mW transmitter using 65nm bulk CMOS process. The transmitter is formed of an amplifier-multiplier chain, where the power amplifier delivers a Psat =16dBm at 110GHz to a passive frequency doubler. The PA stage employs a novel single-ended to 2-way differential power combiner based on vertically coupled transmission lines. A passive frequency doubler implemented using MOS varactors follows the PA. The 216GHz transmitter delivers a maximum of 0.5mW at 216GHz with a 2.8% bandwidth, while consuming 500mW from a 1V DC supply. The chip, implemented in thin BEOL seven metal ST-65nm CMOS process, occupies a total area of 0.88mm2.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2015.7413041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents the design and measurements of a 216GHz, 0.5mW transmitter using 65nm bulk CMOS process. The transmitter is formed of an amplifier-multiplier chain, where the power amplifier delivers a Psat =16dBm at 110GHz to a passive frequency doubler. The PA stage employs a novel single-ended to 2-way differential power combiner based on vertically coupled transmission lines. A passive frequency doubler implemented using MOS varactors follows the PA. The 216GHz transmitter delivers a maximum of 0.5mW at 216GHz with a 2.8% bandwidth, while consuming 500mW from a 1V DC supply. The chip, implemented in thin BEOL seven metal ST-65nm CMOS process, occupies a total area of 0.88mm2.
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