Pub Date : 2015-12-06DOI: 10.1109/APMC.2015.7411579
Q. Xue, Haotian Zhu, Jianan Hui, S. Pang
In this paper, four types of silicon based THz dielectric waveguide are introduced. The silicon based THz dielectric waveguides are all fabricated by DRIE technology. The losses of these dielectric waveguides are very low.
{"title":"Silicon based THz dielectric waveguides","authors":"Q. Xue, Haotian Zhu, Jianan Hui, S. Pang","doi":"10.1109/APMC.2015.7411579","DOIUrl":"https://doi.org/10.1109/APMC.2015.7411579","url":null,"abstract":"In this paper, four types of silicon based THz dielectric waveguide are introduced. The silicon based THz dielectric waveguides are all fabricated by DRIE technology. The losses of these dielectric waveguides are very low.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123637598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-06DOI: 10.1109/APMC.2015.7413011
Bing Zhang, P. Linnér, Camilla Kärnfelt, Pui Lam Tarn, U. Sodervall, H. Zirath
3D metallic printing technology is attempted to implement millimeter-wave (mmWave) antennas. Based on laser beam melting (LBM) technology, the cost and turnaround time of metallic horn antenna fabrication is effectively reduced compared with traditional milling and injection moulding. A conical and a pyramidal horn antenna are printed in 316L stainless steel, both of which demonstrate satisfactory performance compared with simulation, as well as comparable performance with commercial horn antennas. Surface roughness of the printed horn antennas are measured and analyzed, showing improvement upon former designs. The 3D printing technology proves its great potential for further exploration.
{"title":"Attempt of the metallic 3D printing technology for millimeter-wave antenna implementations","authors":"Bing Zhang, P. Linnér, Camilla Kärnfelt, Pui Lam Tarn, U. Sodervall, H. Zirath","doi":"10.1109/APMC.2015.7413011","DOIUrl":"https://doi.org/10.1109/APMC.2015.7413011","url":null,"abstract":"3D metallic printing technology is attempted to implement millimeter-wave (mmWave) antennas. Based on laser beam melting (LBM) technology, the cost and turnaround time of metallic horn antenna fabrication is effectively reduced compared with traditional milling and injection moulding. A conical and a pyramidal horn antenna are printed in 316L stainless steel, both of which demonstrate satisfactory performance compared with simulation, as well as comparable performance with commercial horn antennas. Surface roughness of the printed horn antennas are measured and analyzed, showing improvement upon former designs. The 3D printing technology proves its great potential for further exploration.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132971922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-06DOI: 10.1109/APMC.2015.7413479
W. Wei, K. Mahdjoubi, C. Brousseau, O. Emile
We present a novel way to generate radio waves bearing Orbital Angular Momentum (OAM) in the horn antenna by using a circular metallic waveguide. The OAM mode ℓ = 1 is generated by combination of two TE21 modes inside a circular metallic waveguide. The resulting electrical field distribution and the radiation patterns evidence the properties of waves carrying OAM. The influences of the horn structure on the properties of the generated OAM waves are also studied.
{"title":"Generation of radio orbital angular momentum (OAM) waves with circular metallic waveguide","authors":"W. Wei, K. Mahdjoubi, C. Brousseau, O. Emile","doi":"10.1109/APMC.2015.7413479","DOIUrl":"https://doi.org/10.1109/APMC.2015.7413479","url":null,"abstract":"We present a novel way to generate radio waves bearing Orbital Angular Momentum (OAM) in the horn antenna by using a circular metallic waveguide. The OAM mode ℓ = 1 is generated by combination of two TE21 modes inside a circular metallic waveguide. The resulting electrical field distribution and the radiation patterns evidence the properties of waves carrying OAM. The influences of the horn structure on the properties of the generated OAM waves are also studied.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128009111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-06DOI: 10.1109/APMC.2015.7411743
R. Quéré, J. Nallatamby, S. Laurent, A. Benvegnù, D. Barataud
RF GaN power technologies are emerging for future equipment in the defence, space and telecommunications domains. Indeed the unique properties of GaN Field Effect Transistors in terms of breakdown voltage associated to high cut-off frequencies make possible a breakthrough for the development of new Solid State Power Amplifiers (SSPA) for Radars and Telecommunications applications. In both domains those SSPA are fed by modulated signals such as versatile pulses in the case of Radars or highly modulated signals in the case of telecommunications applications. Therefore it is essential to assess the dynamical behavior of those RF devices fed by large modulated signals. Contrary to CW conditions, the dynamics of parasitic created by trapping and thermal effects can no longer be ignored. In order to get insights into the impact of those effects on large signal characteristics, several characterization techniques are required. Classical DC/pulsed IV characteristics, S-parameters or CW load pull measurement don't provide enough information to characterize the large signal dynamics of the devices. Therefore one has to rely on Low Frequency characterization as well as on Load-Pull measurement with modulated signals. In this presentation several techniques will be reviewed which allow to extract and verify the non linear models of GaN HEMTs in real working conditions. Several characteristics must be obtained concerning the thermal behavior or the trapping behavior of the device. Those characteristics are the inputs of a nonlinear model which is able to reproduce the dynamics of the device. Different experimental test benches will be described: . Ultra wide band (10Hz-40GHz) S-parameters measurement set-up: this set-up allows to obtain the S-parameters of the transistor not only in the high frequency range to extract the RF equivalent circuit, but also in the very low frequency range to characterize the dispersion phenomenon due to the traps. [1,2] . A dedicated test bench to directly measure the thermal impedance of the device. This bench relies on the 3 ω method which takes advantage of the generation of harmonics due to the self heating of the device to obtain the thermal impedance. [3]. A time domain load pull system which allows to perform load pull measurement with pulsed signals and multitone telecommunications signals. [4-8]. This test set-up allows to assess large signal dynamics of GaN HEMTs as well as to identify traps characteristics [9]. All these measurement systems, associated to classical ones (Pulsed IV, S-parameters, CW load pull) allow a complete characterization of the small signal and large signal characteristics. From those characteristics, the extraction of an electrothermal nonlinear model will be described. This model takes into account the nonlinear dynamics of the traps and it will be shown that it is able to reproduce measured characteristics both in the CW mode and in the pulsed mode [10-12]. Some conclusions will be drawn to add
{"title":"Characterization and modeling of large signal dynamics of GaN HEMTs","authors":"R. Quéré, J. Nallatamby, S. Laurent, A. Benvegnù, D. Barataud","doi":"10.1109/APMC.2015.7411743","DOIUrl":"https://doi.org/10.1109/APMC.2015.7411743","url":null,"abstract":"RF GaN power technologies are emerging for future equipment in the defence, space and telecommunications domains. Indeed the unique properties of GaN Field Effect Transistors in terms of breakdown voltage associated to high cut-off frequencies make possible a breakthrough for the development of new Solid State Power Amplifiers (SSPA) for Radars and Telecommunications applications. In both domains those SSPA are fed by modulated signals such as versatile pulses in the case of Radars or highly modulated signals in the case of telecommunications applications. Therefore it is essential to assess the dynamical behavior of those RF devices fed by large modulated signals. Contrary to CW conditions, the dynamics of parasitic created by trapping and thermal effects can no longer be ignored. In order to get insights into the impact of those effects on large signal characteristics, several characterization techniques are required. Classical DC/pulsed IV characteristics, S-parameters or CW load pull measurement don't provide enough information to characterize the large signal dynamics of the devices. Therefore one has to rely on Low Frequency characterization as well as on Load-Pull measurement with modulated signals. In this presentation several techniques will be reviewed which allow to extract and verify the non linear models of GaN HEMTs in real working conditions. Several characteristics must be obtained concerning the thermal behavior or the trapping behavior of the device. Those characteristics are the inputs of a nonlinear model which is able to reproduce the dynamics of the device. Different experimental test benches will be described: . Ultra wide band (10Hz-40GHz) S-parameters measurement set-up: this set-up allows to obtain the S-parameters of the transistor not only in the high frequency range to extract the RF equivalent circuit, but also in the very low frequency range to characterize the dispersion phenomenon due to the traps. [1,2] . A dedicated test bench to directly measure the thermal impedance of the device. This bench relies on the 3 ω method which takes advantage of the generation of harmonics due to the self heating of the device to obtain the thermal impedance. [3]. A time domain load pull system which allows to perform load pull measurement with pulsed signals and multitone telecommunications signals. [4-8]. This test set-up allows to assess large signal dynamics of GaN HEMTs as well as to identify traps characteristics [9]. All these measurement systems, associated to classical ones (Pulsed IV, S-parameters, CW load pull) allow a complete characterization of the small signal and large signal characteristics. From those characteristics, the extraction of an electrothermal nonlinear model will be described. This model takes into account the nonlinear dynamics of the traps and it will be shown that it is able to reproduce measured characteristics both in the CW mode and in the pulsed mode [10-12]. Some conclusions will be drawn to add","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129242140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7412938
M. Meng, Yongpin P. Chen, W. Luo, Z. Nie, Jun Hu
Efficient analysis of electromagnetic scattering from three-dimensional, perfect electrically conducting, multiscale structures in a half space is conducted in this paper. The half-space dyadic Green's function is adopted as the kernel of the electric field integral equation so that the unknowns are only associated with the surface of the scatterers. A recently developed Calderon preconditioner is adopted to significantly improve the ill-conditioning of the matrix due to the multiscale nature of the structures. The kernel-independent multilevel adaptive cross approximation is further implemented to accelerate the computation and reduce the memory requirement. Numerical examples are presented to demonstrate the effectiveness of this method for analyzing multiscale structures situated in a half space.
{"title":"Analysis of EM Scattering from multiscale conducting structures in a half space","authors":"M. Meng, Yongpin P. Chen, W. Luo, Z. Nie, Jun Hu","doi":"10.1109/APMC.2015.7412938","DOIUrl":"https://doi.org/10.1109/APMC.2015.7412938","url":null,"abstract":"Efficient analysis of electromagnetic scattering from three-dimensional, perfect electrically conducting, multiscale structures in a half space is conducted in this paper. The half-space dyadic Green's function is adopted as the kernel of the electric field integral equation so that the unknowns are only associated with the surface of the scatterers. A recently developed Calderon preconditioner is adopted to significantly improve the ill-conditioning of the matrix due to the multiscale nature of the structures. The kernel-independent multilevel adaptive cross approximation is further implemented to accelerate the computation and reduce the memory requirement. Numerical examples are presented to demonstrate the effectiveness of this method for analyzing multiscale structures situated in a half space.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115377703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7413116
Jiawen Sun, Liuge Du, Wanshun Jiang
An one dimensional ultra-wideband sparse MIMO antenna array has been designed for near field RCS imaging system in this paper. The proposed one dimensional MIMO antenna array is composed of 14 transmitting antennas and 14 receiving antenna. The antenna element of the proposed MIMO array is a 1-8GHz taper slotted low profile Vivaldi antenna with the gain from 4.52 to 10.04 dB. A prototype of the MIMO imaging array is fabricated and experimentally studied as well.
{"title":"Design of a 1-D sparse UWB MIMO array for near field RCS imaging system","authors":"Jiawen Sun, Liuge Du, Wanshun Jiang","doi":"10.1109/APMC.2015.7413116","DOIUrl":"https://doi.org/10.1109/APMC.2015.7413116","url":null,"abstract":"An one dimensional ultra-wideband sparse MIMO antenna array has been designed for near field RCS imaging system in this paper. The proposed one dimensional MIMO antenna array is composed of 14 transmitting antennas and 14 receiving antenna. The antenna element of the proposed MIMO array is a 1-8GHz taper slotted low profile Vivaldi antenna with the gain from 4.52 to 10.04 dB. A prototype of the MIMO imaging array is fabricated and experimentally studied as well.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115654183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7413207
Milim Lee, Changhyun Lee, Changkun Park
In this work, we propose a 24-GHz VCO using a transformer. In the mm-wave band, parasitic components of the passive device and feeding line degrade VCO performance. To reduce the undesired effects of passive devices, we replaced the transformer instead of passive devices such as the inductor or capacitor. In addition, we propose a frequency tuning technique using a gate bias instead of a typical varactor. To verify the feasibility of the proposed structure, we designed the VCO using a 110-nm RFCMOS process. The measured frequency tuning range of VCO was 22.7 to 24.2 GHz, and it had output power of 8.4 dBm at 24 GHz. The measured phase noise was -95.33 dBc/Hz at 1 MHz, offset at an operating frequency of 23.6 GHz. The chip size was 370 × 380 μm2, including test pads.
{"title":"Design of a 24-GHz VCO using magnetic coupling of gate-drain through a transformer","authors":"Milim Lee, Changhyun Lee, Changkun Park","doi":"10.1109/APMC.2015.7413207","DOIUrl":"https://doi.org/10.1109/APMC.2015.7413207","url":null,"abstract":"In this work, we propose a 24-GHz VCO using a transformer. In the mm-wave band, parasitic components of the passive device and feeding line degrade VCO performance. To reduce the undesired effects of passive devices, we replaced the transformer instead of passive devices such as the inductor or capacitor. In addition, we propose a frequency tuning technique using a gate bias instead of a typical varactor. To verify the feasibility of the proposed structure, we designed the VCO using a 110-nm RFCMOS process. The measured frequency tuning range of VCO was 22.7 to 24.2 GHz, and it had output power of 8.4 dBm at 24 GHz. The measured phase noise was -95.33 dBc/Hz at 1 MHz, offset at an operating frequency of 23.6 GHz. The chip size was 370 × 380 μm2, including test pads.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116635348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7411809
K. Zheng, Huan Luo, Zongmin Mu
In order to extend the reach of a conventional FDTD simulation without using extraordinary computer resources, a large scale of fine to coarse cell transformation for 3D FDTD Simulation is presented in this paper. With the proposed method, numerical results are discussed in the three-dimensional case. It proved that the proposed method is of accuracy and high efficiency by comparing with analytic solution and conventional FDTD.
{"title":"A large scale of fine to coarse cell transformation for FDTD simulation","authors":"K. Zheng, Huan Luo, Zongmin Mu","doi":"10.1109/APMC.2015.7411809","DOIUrl":"https://doi.org/10.1109/APMC.2015.7411809","url":null,"abstract":"In order to extend the reach of a conventional FDTD simulation without using extraordinary computer resources, a large scale of fine to coarse cell transformation for 3D FDTD Simulation is presented in this paper. With the proposed method, numerical results are discussed in the three-dimensional case. It proved that the proposed method is of accuracy and high efficiency by comparing with analytic solution and conventional FDTD.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127232599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7411801
Tauseef Hussain, Q. Cao, I. Majid
The transmission-line modeling (TLM) numerical method is employed to investigate the high-frequency shielding effectiveness (SE) of a metallic enclosure with unconventional aperture geometries. Analytical methods can predict SE but they have two main limitations: one is they can predict the SE of enclosure with very simple aperture shapes and second is that results cannot be predicted with accuracy after the first resonance frequency of cavity. We have investigated some new geometries for apertures from 0 to 3 GHz frequency band and discovered some important characteristics of these shapes by using the TLM based simulator. A novel concept of complementary apertures is introduced which has pronounced effect on cavity resonance modes and SE of enclosure. Another useful phenomenon was also observed and that is despite of longer aperture lengths perpendicular to electrical field (E-field), some apertures have better SE than others for the same coverage area.
{"title":"Shielding effectiveness of enclosure with unconventional aperture array","authors":"Tauseef Hussain, Q. Cao, I. Majid","doi":"10.1109/APMC.2015.7411801","DOIUrl":"https://doi.org/10.1109/APMC.2015.7411801","url":null,"abstract":"The transmission-line modeling (TLM) numerical method is employed to investigate the high-frequency shielding effectiveness (SE) of a metallic enclosure with unconventional aperture geometries. Analytical methods can predict SE but they have two main limitations: one is they can predict the SE of enclosure with very simple aperture shapes and second is that results cannot be predicted with accuracy after the first resonance frequency of cavity. We have investigated some new geometries for apertures from 0 to 3 GHz frequency band and discovered some important characteristics of these shapes by using the TLM based simulator. A novel concept of complementary apertures is introduced which has pronounced effect on cavity resonance modes and SE of enclosure. Another useful phenomenon was also observed and that is despite of longer aperture lengths perpendicular to electrical field (E-field), some apertures have better SE than others for the same coverage area.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127288401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/APMC.2015.7413425
I. F. Dos Anjos, G. Boeck, S. Barbin
In the present study it is described the determination of the dielectric properties of a micaceous mineral, namely vermiculite, using S-parameters. AC conductivity, permittivity, loss tangent, and humidity were determined. The dependence of the dielectric constant and the humidity was investigated. Another important factor considered is the variation of the AC conductivity with frequency, which is strongly influenced by the behavior of the charge carriers for different frequencies and the material's losses. The technique addressed in this work, is based on the measured S-parameters of a microstrip line structure, followed by numerical calculations based on the Nicolson - Ross - Weir method. The presented method is accurate and can be used for further studies to understand the behavior of other minerals or soil when submitted to electromagnetic fields.
本文介绍了利用s参数测定云母矿物蛭石介电性能的方法。测定交流电导率、介电常数、损耗正切和湿度。研究了介电常数与湿度的关系。考虑的另一个重要因素是交流电导率随频率的变化，这受到不同频率下载流子的行为和材料损耗的强烈影响。在这项工作中解决的技术是基于测量的微带线结构的s参数，然后基于Nicolson - Ross - Weir方法进行数值计算。所提出的方法是准确的，可用于进一步的研究，以了解其他矿物或土壤在电磁场作用下的行为。
{"title":"Determination of dielectric properties and humidity of vermiculite using S-parameters","authors":"I. F. Dos Anjos, G. Boeck, S. Barbin","doi":"10.1109/APMC.2015.7413425","DOIUrl":"https://doi.org/10.1109/APMC.2015.7413425","url":null,"abstract":"In the present study it is described the determination of the dielectric properties of a micaceous mineral, namely vermiculite, using S-parameters. AC conductivity, permittivity, loss tangent, and humidity were determined. The dependence of the dielectric constant and the humidity was investigated. Another important factor considered is the variation of the AC conductivity with frequency, which is strongly influenced by the behavior of the charge carriers for different frequencies and the material's losses. The technique addressed in this work, is based on the measured S-parameters of a microstrip line structure, followed by numerical calculations based on the Nicolson - Ross - Weir method. The presented method is accurate and can be used for further studies to understand the behavior of other minerals or soil when submitted to electromagnetic fields.","PeriodicalId":269888,"journal":{"name":"2015 Asia-Pacific Microwave Conference (APMC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125946038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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