Analysis of CMOS-Memristive Analog Multiplier Design

Aidos Kanapyanov, O. Krestinskaya
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Abstract

The conventional CMOS analog multiplier circuits used in different architectures suffer from linearity problems, low processing speed, low accuracy large on-chip area and high power consumption. One of the possible solution to overcome these problems is to use memristive components in analog multiplier design. This paper proposes a CMOS analog multiplier design with memristive components. The aim of the paper is to compare the power consumption and overall characteristic of the memristor-based multiplier with the performance conventional CMOS multiplier circuit. The circuit is designed using TSMC 180nm CMOS technology, and the simulations are conducted in SPICE. The effects of channel modulation and temperature on the multiplier performance are discussed.
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cmos -忆阻模拟乘法器设计分析
传统CMOS模拟乘法器电路存在线性问题,处理速度慢,精度低,片上面积大,功耗高。克服这些问题的一个可能的解决方案是在模拟乘法器设计中使用忆阻元件。本文提出了一种带有忆阻元件的CMOS模拟乘法器设计。本文的目的是比较基于忆阻器的乘法器与传统CMOS乘法器电路的功耗和总体特性。该电路采用台积电180nm CMOS工艺设计,并在SPICE中进行了仿真。讨论了通道调制和温度对倍增器性能的影响。
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