{"title":"Comparison of NTBI and irradiation induced interface states","authors":"K. Kambour, D. Nguyen, C. Kouhestani, R. Devine","doi":"10.1109/IIRW.2013.6804183","DOIUrl":null,"url":null,"abstract":"The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.