Comparison of NTBI and irradiation induced interface states

K. Kambour, D. Nguyen, C. Kouhestani, R. Devine
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引用次数: 5

Abstract

The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.
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NTBI与辐照诱导界面态的比较
在栅极介质和硅衬底之间的界面处,通过消除悬垂键产生的界面态对于mosfet中负偏置温度不稳定性阈值电压位移的增长和器件的辐射灵敏度都是重要的。在本文中,我们比较了这两种工艺的界面状态的产生及其在高温下可能的退火。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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