Influences of circuit mismatch on paralleling silicon carbide MOSFETs

Abstract

Current sharing is a major problem for paralleling devices, which can affect the performance and reliability of devices. In this paper, the factors leading to current unbalance in paralleling silicon carbide (SiC) MOSFETs are analyzed, especially the circuit mismatch. A double pulse test circuit based on SiC MOSFET is established for testing the circuit mismatch including common source stray inductance (Ls), switching loop stray inductance (Ld) and the gate driver resistance (Rg). The experimental results verify the influences caused by circuit mismatch on the current sharing in paralleling devices.