Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices

Ziang Chen, Guofu Zhang, Hao Cai, C. Bengel, Feng Liu, Xianyue Zhao, Shahar Kvatinsky, Heidemarie Schmidt, R. Waser, S. Menzel, Nan Du
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引用次数: 1

Abstract

The high demand for performance and energy efficiency poses significant challenges for computing systems in recent years. The memristor-based crossbar array architecture is enthusiastically regarded as a potential competitor to traditional solutions due to its low power consumption and fast switching speed. Especially by leveraging self-rectifying memristive devices, passive crossbar arrays potentially enable high memory densities. Nonetheless, due to the lack of a switching control per cell, these passive, self-rectifying memristive crossbar arrays (srMCA) suffer from sneak path current issues that limit the range of accurate operation of the crossbar array. In this work, the sneak path current issues in the passive srMCAs based on self-rectifying bipolar and complementary switching memristive devices are comparatively analyzed. Under consideration of the worst-case scenario, three reading schemes are investigated: one wordline pull-up (OneWLPU), all wordline pull-up (AllWLPU), and floating (FL) reading schemes. As a conclusion, despite different switching dynamics, both types of self-rectifying memristive devices can efficiently suppress sneak path current in the srMCAs. In the FL reading scheme, the sneak path current flowing through the unselected reversely biased memristive cells in the srMCA can be considered as an accurate estimation for the practical sneak path current in the srMCA. By analyzing the sneak path current in the srMCAs with a size up to 64 × 64, it is demonstrated that the leakage current plays a crucial role for suppressing the sneak path current, and the sneak path current via an individual cell exhibits a continuous decrease while the accumulated total sneak path current in the unselected reverse biased region is increasing with expanding the crossbar size. The comparative study on the bipolar and complementary memristive devices based srMCAs under diverse reading schemes reveals the influence of the switching dynamics on the sneak path current effect in the srMCAs, and provides a beneficial reference and feasible solutions for the future optimization of the crossbar topology with the intention of mitigating sneak path effects.
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基于新型记忆器件的自整流交叉棒阵列的潜行路径效应研究
近年来,对性能和能源效率的高要求对计算系统提出了重大挑战。基于忆阻器的交叉栅阵列架构由于其低功耗和快速的开关速度而被广泛认为是传统解决方案的潜在竞争对手。特别是通过利用自整流记忆器件,无源交叉栅阵列有可能实现高存储密度。然而,由于缺乏每个单元的开关控制,这些无源、自整流记忆交叉棒阵列(srMCA)存在潜行路径电流问题,限制了交叉棒阵列的精确操作范围。本文比较分析了基于自整流双极和互补开关记忆体器件的无源srmca的潜径电流问题。考虑到最坏的情况,研究了三种读取方案:一个词线上拉(OneWLPU)、所有词线上拉(AllWLPU)和浮动(FL)读取方案。综上所述,尽管开关动态不同,但两种类型的自整流记忆体器件都可以有效地抑制srmca中的潜行路径电流。在FL读取方案中,流过srMCA中未选择的反向偏置记忆单元的潜行路径电流可以被认为是srMCA中实际潜行路径电流的准确估计。通过对最大尺寸为64 × 64的srmca的潜行路径电流分析,表明泄漏电流对抑制潜行路径电流起着至关重要的作用,通过单个单元的潜行路径电流呈连续减小的趋势,而未选择的反向偏置区域的累积总潜行路径电流随着横条尺寸的增大而增大。通过对不同读取方案下基于双极和互补记忆体器件的srmca的比较研究,揭示了开关动力学对srmca中潜径电流效应的影响,为今后优化交叉棒拓扑以减轻潜径效应提供了有益的参考和可行的解决方案。
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