Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5

Andrea N. Capa Salinas, Brenden R. Ortiz, Calvin Bales, Jonathan Frassineti, Vesna F. Mitrović, Stephen D. Wilson
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引用次数: 1

Abstract

In this work, we study the effect of electron doping on the kagome superconductor CsV 3 Sb 5 . Single crystals and powders of CsV 3 Sb 5− x Te x are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV 3 Sb 5 .
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载流子调谐CsV3Sb5相图中的电子-空穴不对称性
本文研究了电子掺杂对kagome超导体cs3sb5的影响。通过磁化率、核四极共振和x射线衍射测量,我们合成了CsV 3 Sb 5−x Te x的单晶和粉末,并对其进行了表征。我们观察到电子掺杂剂的引入对电荷密度、转变温度和超导温度有轻微的抑制。与空穴掺杂相比,这两种跃迁都相对不受干扰,直到Te在晶格内的溶解度极限。比较了电子调谐和空穴调谐的cs3sb5的电子相图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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