Silicon carbide pinched barrier rectifier (PBR)

Abstract

In this paper, a new rectifier structure in silicon carbide (SiC) is presented for the first time. The proposed structure involves neither Schottky contact nor minor carrier injection via P-N junction. With adjacent P+ areas placed sufficiently close, pinched barrier is formed for rectifier purpose. Numerical simulations are carried out to verify its function, and optimize its performance. Based on the simulation results, a good trade-off can be achieved between forward drop and reverse leakage, provided that this new structure offers flexibility of controlling onset voltage by adjusting channel parameters continuously.