Effect of TiN-MgO intermediate layer on the microstructure and magnetic properties of FePt thin films

K. Dong, H. Li, J. Deng, Y. Peng, G. Ju, G. Chow, J. Chen
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Abstract

In order to achieve the application of FePt based films, great progresses have been made in the fabrication of granular FePt thin films using MgO or TiN underlayer/intermediate layers. However, the MgO intermediate layer possessing small surface energy led to large opening-up in the in-plane hysteresis loop while the TiN intermediate layer possessing large surface energy caused the formation of the semi-spherical FePt grains with big grain size and poor grain isolation. In order to solve these problems, we proposed a new intermediate layer- TiN-MgO. As compared with TiN intermediate layer, the TiN-MgO intermediate layer had smaller surface energy and larger interfacial energy, thus favoring Volmer-Weber type (island) growth of FePt. As seen from planar view TEM images (Fig.1a and b), by doping MgO into the TiN intermediate layer, the grain boundaries were more distinct. Moreover, grain size decreased from 8.77 nm to 7.58 nm for 50 vol.% MgO doping into TiN. The cross-sectional TEM images (Fig.1 c and d) indicated that FePt-SiNx-C films were grown on the top of TiN-MgO polycrystalline intermediate layer with a single-layer structure and FePt grains were well isolated. Furthermore, the grain shape of FePt became more uniform with doping MgO into TiN intermediate layer. Although, the perpendicular anisotropy had a little deterioration which was due to the nonwetting of FePt grains on TiN-MgO intermediate layer (Fig.1 e), the 4nm-SiNx 40 vol.%-C 20 vol.% film grown on TiN/TiN-MgO 50 vol.% with a larger out-of-plane coercivity of 21.7 kOe and a small in-plane coercivity of 3.5 kOe can still obtained (Fig.1g).
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TiN-MgO中间层对FePt薄膜微观结构和磁性能的影响
为了实现FePt基薄膜的应用,利用MgO或TiN衬底/中间层制备颗粒状FePt薄膜已经取得了很大的进展。然而,表面能小的MgO中间层导致面内滞回线开放大,而表面能大的TiN中间层形成晶粒尺寸大、晶粒隔离性差的半球形FePt晶粒。为了解决这些问题,我们提出了一种新的中间层- TiN-MgO。与TiN中间层相比,TiN- mgo中间层具有较小的表面能和较大的界面能,有利于FePt的Volmer-Weber型(岛状)生长。从平面TEM图像(图1a和图b)可以看出,在TiN中间层中掺杂MgO后,晶界更加清晰。当MgO掺杂量为50%时,晶粒尺寸从8.77 nm减小到7.58 nm。TEM横截面图(图1 c和d)显示,FePt- sinx - c薄膜生长在TiN-MgO多晶中间层顶部,呈单层结构,FePt晶粒隔离良好。在TiN中间层中掺入MgO后,FePt的晶粒形状更加均匀。虽然由于FePt晶粒在TiN- mgo中间层上的不润湿导致垂直各向异性略有恶化(图1e),但在TiN/TiN- mgo 50 vol.%上生长的4nm-SiNx 40 vol.%-C 20 vol.%薄膜仍可获得较大的面外矫顽力21.7 kOe和较小的面内矫顽力3.5 kOe(图1g)。
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