J. Hwang, H. Ryu, D. Song, I. Y. Han, H. Park, D. Jang, Y.H. Lee
{"title":"Room temperature continuous operation of optically-pumped two-dimensional photonic crystal slab laser","authors":"J. Hwang, H. Ryu, D. Song, I. Y. Han, H. Park, D. Jang, Y.H. Lee","doi":"10.1109/ISLC.2000.882274","DOIUrl":null,"url":null,"abstract":"We report the first continuous-wave (CW) operation of 2D slab photonic crystal laser at room temperature. This 2D photonic bandgap laser is built on a thin InGaAsP slab waveguide structure. 2D triangular photonic crystal mirrors are formed by drilling holes. The lattice constant is 450 nm and the radius of holes is 140 nm. To locate the active layer near an anti-node of the slab, a 100nm thick layer is added on top of the active material which consists of six compressively strained (0.6%) InGaAsP quantum wells.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"50 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the first continuous-wave (CW) operation of 2D slab photonic crystal laser at room temperature. This 2D photonic bandgap laser is built on a thin InGaAsP slab waveguide structure. 2D triangular photonic crystal mirrors are formed by drilling holes. The lattice constant is 450 nm and the radius of holes is 140 nm. To locate the active layer near an anti-node of the slab, a 100nm thick layer is added on top of the active material which consists of six compressively strained (0.6%) InGaAsP quantum wells.
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