A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers

S. Böhme, C. Girardot, J. Garnier, J. Arias‐Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann
{"title":"A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers","authors":"S. Böhme, C. Girardot, J. Garnier, J. Arias‐Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann","doi":"10.1117/12.2219312","DOIUrl":null,"url":null,"abstract":"In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2219312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高阶PS-PDMS嵌段共聚物工业兼容定向自组装路线
在这项工作中,我们提出了完全适合工业的高chi PS-PDMS嵌段共聚物工艺。在标准光刻堆栈内制作的沟槽上进行DSA,并使用类似于工业中用于栅极蚀刻的蚀刻工艺进行图案转移。我们提出了两种不同的PS-PDMS (45.5kg/mol, 16kg/mol)仅通过热退火进行对准。通过在高分子量BCP (45.5k)中加入增塑剂分子,我们不仅避免了溶剂蒸汽退火,而且显著缩短了处理时间。研究了导光线的性能和最终BCP硬掩膜的质量(CD均匀性、LWR、LER)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
SEM based overlay measurement between resist and buried patterns Contrast optimization for 0.33NA EUV lithography Analysis of wafer heating in 14nm DUV layers GPU accelerated Monte-Carlo simulation of SEM images for metrology Lensless hyperspectral spectromicroscopy with a tabletop extreme-ultraviolet source
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1