A New Technique of Designing Low Power, Low Voltage MOS CML Circuits by using Modifications in the PDN

R. Daryani, Maneesha Gupta
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引用次数: 1

Abstract

MOS Current Mode Logic (MCML) circuits are the basic elements in the designing of the logic gates and flip flops which are further used in designing of various digital circuits like memory, clock circuits, and registers. On the chips that involve mixed signal circuits, MCML logic circuits are highly preferred. In this paper, MCML circuits with low power consumption have been proposed by modifying the pull down network of the circuit. In the circuits, the Floating Gate Mosfet (FGMOS) and Dynamic Threshold Mosfet (DTMOS) transistors are used in place of the conventional MOS circuits. The FGMOS and DTMOS have modifiable threshold levels. Utilizing this property of the FGMOS and DTMOS, they have been employed in the CML circuits to lower the minimum voltage requirements and also the reduction of power consumption by FGMOS, using 180 nm Complementary Mosfet (CMOS) process parameters. The SPICE simulations are performed and the analysis is done for all the three circuits and the comparisons are drawn. We observe a lower supply voltage requirement in the proposed circuits and the power consumption is decreased by 30% in the FGMOS circuit, making it more suitable for low power circuits.
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利用PDN中的修改设计低功耗、低电压MOS CML电路的新技术
MOS电流模式逻辑(MCML)电路是设计逻辑门和触发器的基本元件,并进一步应用于各种数字电路的设计,如存储器、时钟电路和寄存器。在涉及混合信号电路的芯片上,优先选用MCML逻辑电路。本文通过修改电路的下拉网络,提出了低功耗的MCML电路。在电路中,采用浮门Mosfet (FGMOS)和动态阈值Mosfet (DTMOS)晶体管代替传统的MOS电路。FGMOS和DTMOS具有可修改的阈值水平。利用FGMOS和DTMOS的这一特性,它们已被用于CML电路中,以降低最低电压要求,并减少FGMOS的功耗,使用180 nm互补Mosfet (CMOS)工艺参数。对三种电路进行了SPICE仿真和分析,并进行了比较。我们观察到所提出的电路具有较低的电源电压要求,并且FGMOS电路的功耗降低了30%,使其更适合低功耗电路。
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