{"title":"A new type MOS-gated tunnel transistor with a Schottky barrier","authors":"M. Kimura","doi":"10.1109/TENCON.1995.496421","DOIUrl":null,"url":null,"abstract":"A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.
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