Discussion of damage induced by trigger pulse at different repetition frequencies in GaAs PCSS's

X. Shan, Dai Huiying
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Abstract

The paper focuses on the light damage induced by nanosecond laser pulse with 1.06µm wavelength at high repetition frequencies in switch materials by comparing the resistivity values when the switch is on/off, discusses the damage mechanism. Experiment indicates that input laser with different repetition frequencies may cause different temperature rising speeds on the surface material, when the laser repetition frequency less than 1 kHz, the temperature accumulation effect in the material dose not perform significantly, and When the pulse laser is at high repetition frequency, the temperature rising rate in the laser irradiation area gets faster.
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不同重复频率触发脉冲对GaAs PCSS损伤的探讨
研究了高重复频率下波长为1.06µm的纳秒激光脉冲对开关材料的光损伤,比较了开关开/关时的电阻率值,探讨了损伤机理。实验表明,不同重复频率的输入激光会对材料表面产生不同的温升速度,当激光重复频率小于1 kHz时,材料剂量内的温度积累效应不明显,而当脉冲激光处于高重复频率时,激光照射区域内的温升速度更快。
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