A fully integrated W-band beamformer in 0.13-μm SiGe BiCMOS technology based on distributed true-time-delay architecture

Z. Wang
{"title":"A fully integrated W-band beamformer in 0.13-μm SiGe BiCMOS technology based on distributed true-time-delay architecture","authors":"Z. Wang","doi":"10.1109/INEC.2016.7589421","DOIUrl":null,"url":null,"abstract":"A 4:1 True-Time-Delay (TTD) beamformer architecture is proposed in this paper based on distributed circuit topology. This architecture and its dual form can be employed in both transmitter and receiver sides. Its implementation in a W-band imaging system has been demonstrated in 0.13-μm SiGe BiCMOS. The wideband variable delay of each path is controllable from Ops to 2ps with 0.45ps steps, corresponding to steering angle from -18° to +18° with a step of 4.5°.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A 4:1 True-Time-Delay (TTD) beamformer architecture is proposed in this paper based on distributed circuit topology. This architecture and its dual form can be employed in both transmitter and receiver sides. Its implementation in a W-band imaging system has been demonstrated in 0.13-μm SiGe BiCMOS. The wideband variable delay of each path is controllable from Ops to 2ps with 0.45ps steps, corresponding to steering angle from -18° to +18° with a step of 4.5°.
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基于分布式实时延迟架构的0.13 μm SiGe BiCMOS技术全集成w波段波束形成器
本文提出了一种基于分布式电路拓扑的4:1真时延波束形成结构。这种结构和它的双重形式可以同时应用于发送端和接收端。并在0.13 μm SiGe BiCMOS上演示了其在w波段成像系统中的实现。每条路径的宽带可变延迟从Ops到2ps可控,步长0.45ps,对应于转向角从-18°到+18°,步长为4.5°。
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