{"title":"Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)","authors":"M. Vasilenko, N. Shwartz","doi":"10.1109/EDM.2015.7184477","DOIUrl":null,"url":null,"abstract":"A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2015.7184477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.
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