Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184497
A. N. Karpov, N. Shwartz
Modeling results of elastic strain distribution in InAs/GaAs core-shell nanowires are presented. Calculations were carried out using molecular static technique. The critical core radius and critical shell thickness of coherent radial heterostructures were estimated. Critical core radius was demonstrated to be 1 nm.
{"title":"Modeling of elastic energy relaxation in coaxial InAs-GaAs nanowire heterostructures","authors":"A. N. Karpov, N. Shwartz","doi":"10.1109/EDM.2015.7184497","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184497","url":null,"abstract":"Modeling results of elastic strain distribution in InAs/GaAs core-shell nanowires are presented. Calculations were carried out using molecular static technique. The critical core radius and critical shell thickness of coherent radial heterostructures were estimated. Critical core radius was demonstrated to be 1 nm.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116704547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184524
V. Avgustinovich, S. Artemenko, V. Igumnov, Y. Yushkov
The work presents the results of theoretical and experimental studies of the formation of microwave pulses with the adjustable power, duration, repetition rate and the envelope form during energy output from the cavity by controlled transformation of the oscillation mode at the waveguide stub coupling aperture. Pulse parameters are changed by adjustable elements of the coupling of modes, which directly affect to the coefficient of the coupling of modes h. The possibility to form a series of subnanosecond MW pulses at a fractional energy output and nanosecond pulses of various pulse duration at a single complete output of high frequency energy from the compressor cavity is demonstrated. The envelope of the pulses is calculated through the recurrence relations between the amplitudes of waves in the system, the relations between which have been recorded according to the scattering matrix method. Using this approach on passive X-band RF pulse compression system, we obtained power gain of 8-9 dB, 8-10 ns pulse duration at 9.248 GHz.
{"title":"Formation of high power microwave pulses with adjustable parameters in active X-band RF compression systems","authors":"V. Avgustinovich, S. Artemenko, V. Igumnov, Y. Yushkov","doi":"10.1109/EDM.2015.7184524","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184524","url":null,"abstract":"The work presents the results of theoretical and experimental studies of the formation of microwave pulses with the adjustable power, duration, repetition rate and the envelope form during energy output from the cavity by controlled transformation of the oscillation mode at the waveguide stub coupling aperture. Pulse parameters are changed by adjustable elements of the coupling of modes, which directly affect to the coefficient of the coupling of modes h. The possibility to form a series of subnanosecond MW pulses at a fractional energy output and nanosecond pulses of various pulse duration at a single complete output of high frequency energy from the compressor cavity is demonstrated. The envelope of the pulses is calculated through the recurrence relations between the amplitudes of waves in the system, the relations between which have been recorded according to the scattering matrix method. Using this approach on passive X-band RF pulse compression system, we obtained power gain of 8-9 dB, 8-10 ns pulse duration at 9.248 GHz.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123275247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184593
A. S. Khlebnikov, V. Kaliy
The paper proposes new point of view to conventional electrical power generation systems. Having considered different variations of the power systems, authors concluded that the electrical energy generating systems based on brushless synchronous generators are very promise. The paper emphasizes necessity of development of up-to-date digital voltage regulators with maintenance documentation and equipment.
{"title":"Development of novel aircraft electrical power systems","authors":"A. S. Khlebnikov, V. Kaliy","doi":"10.1109/EDM.2015.7184593","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184593","url":null,"abstract":"The paper proposes new point of view to conventional electrical power generation systems. Having considered different variations of the power systems, authors concluded that the electrical energy generating systems based on brushless synchronous generators are very promise. The paper emphasizes necessity of development of up-to-date digital voltage regulators with maintenance documentation and equipment.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115105037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184490
K. Svit, K. Zhuravlev
Self-assembly of CdS nanocrystals during evaporation of Langmuir-Blodgett matrix on the silica surface was investigated. Information about the size and spatial distribution of self-assembled nanocrystal ensembles were obtained using atomic force microscopy. It was found that matrix annealing temperature strongly affect self-assembly pattern. At annealing temperatures within the range of 175-200°C self-assembly mainly determined by vad der Waals forces between the nanocrystals resulting in formation of three-dimensional ensembles. With annealing temperature increase NC tend to spread evenly on the substrate surface create due to increase on capillary forces influence on self-assembly process.
研究了CdS纳米晶体在Langmuir-Blodgett矩阵蒸发过程中在二氧化硅表面的自组装。利用原子力显微镜获得了自组装纳米晶系的尺寸和空间分布信息。发现基体退火温度对自组装模式有较大影响。在175-200℃的退火温度范围内，自组装主要由纳米晶体之间的vad - der - Waals力决定，从而形成三维系综。随着退火温度的升高，由于毛细力的增加对自组装过程的影响，cnc在基体表面的分布趋于均匀。
{"title":"Self-assembly of CdS nanocrystals obtained by Langmuir-Blodgett technique on the SiO2 surface","authors":"K. Svit, K. Zhuravlev","doi":"10.1109/EDM.2015.7184490","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184490","url":null,"abstract":"Self-assembly of CdS nanocrystals during evaporation of Langmuir-Blodgett matrix on the silica surface was investigated. Information about the size and spatial distribution of self-assembled nanocrystal ensembles were obtained using atomic force microscopy. It was found that matrix annealing temperature strongly affect self-assembly pattern. At annealing temperatures within the range of 175-200°C self-assembly mainly determined by vad der Waals forces between the nanocrystals resulting in formation of three-dimensional ensembles. With annealing temperature increase NC tend to spread evenly on the substrate surface create due to increase on capillary forces influence on self-assembly process.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116169159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184476
A. E. Budazhapova, A. Shklyaev
The formation of island ensembles during the Ge deposition on the Si(100) surface at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at the Ge growth temperatures below 700°C, become monomodal at temperatures above 800°C. The strain relaxation processes at temperatures below 800°C usually occurs by means of the mass transfer from small to neighboring large islands, leading to highly inhomogeneous island distributions in size and along the surface. The monomodal island size distribution is formed under a Ge deposition flux in the conditions of a long deposited-atom surface diffusion length, which provides the atom incorporation in the most preferable surface places. This produces islands to be uniform in size and homogeneously distributed along the surface.
{"title":"Mechanisms of surface morphology formation during Ge growth on Si(100) at high temperatures","authors":"A. E. Budazhapova, A. Shklyaev","doi":"10.1109/EDM.2015.7184476","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184476","url":null,"abstract":"The formation of island ensembles during the Ge deposition on the Si(100) surface at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at the Ge growth temperatures below 700°C, become monomodal at temperatures above 800°C. The strain relaxation processes at temperatures below 800°C usually occurs by means of the mass transfer from small to neighboring large islands, leading to highly inhomogeneous island distributions in size and along the surface. The monomodal island size distribution is formed under a Ge deposition flux in the conditions of a long deposited-atom surface diffusion length, which provides the atom incorporation in the most preferable surface places. This produces islands to be uniform in size and homogeneously distributed along the surface.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121869034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184477
M. Vasilenko, N. Shwartz
A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.
{"title":"Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)","authors":"M. Vasilenko, N. Shwartz","doi":"10.1109/EDM.2015.7184477","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184477","url":null,"abstract":"A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184601
Kirill K. Kopylov, A. Khristolyubov, Alexandra I. Khristolyubova
The use of high-frequency PWM converters for laser diodes operating in a pulse mode is a prospective direction. High demands are made to the quality of pump current pulses. In this paper the dual-channel step-down DC/DC converter is considered as a pulse shaper. In addition, the converter control method is proposed. This method allows to set phases of the control signals quickly and without changing the common output current. To show the applicability of this method the PSIM model was developed.
{"title":"The pump current pulse generator for laser diodes","authors":"Kirill K. Kopylov, A. Khristolyubov, Alexandra I. Khristolyubova","doi":"10.1109/EDM.2015.7184601","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184601","url":null,"abstract":"The use of high-frequency PWM converters for laser diodes operating in a pulse mode is a prospective direction. High demands are made to the quality of pump current pulses. In this paper the dual-channel step-down DC/DC converter is considered as a pulse shaper. In addition, the converter control method is proposed. This method allows to set phases of the control signals quickly and without changing the common output current. To show the applicability of this method the PSIM model was developed.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128064788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184574
M. Dybko, S. Brovanov
Paper presents a model of a shunt active power filter combined with battery energy storage as a unified power conditioning system. It was shown that additional energy storage device in an active power filter makes it possible to extend functionality of the power system. In addition, usage of the parallel inverters with interleaved PWM allowed us to expand the bandwidth of the active power filter. A simulation results proving effectiveness of the proposed power conditioning system are given.
{"title":"Active power filter with battery energy storage based on NPC inverters","authors":"M. Dybko, S. Brovanov","doi":"10.1109/EDM.2015.7184574","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184574","url":null,"abstract":"Paper presents a model of a shunt active power filter combined with battery energy storage as a unified power conditioning system. It was shown that additional energy storage device in an active power filter makes it possible to extend functionality of the power system. In addition, usage of the parallel inverters with interleaved PWM allowed us to expand the bandwidth of the active power filter. A simulation results proving effectiveness of the proposed power conditioning system are given.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"26 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125679122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184553
A. Kulagin, G. Evtushenko, S. Torgaev, T. Evtushenko
The kinetic model of a copper vapor laser operating in a low input energy mode is presented. The modelling results demonstrate the possibility of producing generation in this type of lasers at high frequencies.
{"title":"Low input energy copper vapor laser","authors":"A. Kulagin, G. Evtushenko, S. Torgaev, T. Evtushenko","doi":"10.1109/EDM.2015.7184553","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184553","url":null,"abstract":"The kinetic model of a copper vapor laser operating in a low input energy mode is presented. The modelling results demonstrate the possibility of producing generation in this type of lasers at high frequencies.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"35 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131956564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184607
Nabat A. Zhumantaeva, L. I. Lisitsyna, V. Pedder, A. Aleinik, Aleksandr Y. Kondrashov
Surgical method for removing pathologically altered areas of tissue is analyzed. Skin pathologies such as benign papillomas and Dupuytren's contracture, the removal of which may be carried out using cold plasma (CP-coblation) are analyzed. The advantages of coblation listed. The test results of cold plasma application on biopsy of muscle tissue with the experimental setup are shown. The paper examines a number of sites for possible use of coblation. The experimental setup for the study and optimization of electrical and technological parameters of coblation method are described.
{"title":"Justification of the possibility of using cold-plasma method in surgery of papillomatosis and Dupuytren's contracture","authors":"Nabat A. Zhumantaeva, L. I. Lisitsyna, V. Pedder, A. Aleinik, Aleksandr Y. Kondrashov","doi":"10.1109/EDM.2015.7184607","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184607","url":null,"abstract":"Surgical method for removing pathologically altered areas of tissue is analyzed. Skin pathologies such as benign papillomas and Dupuytren's contracture, the removal of which may be carried out using cold plasma (CP-coblation) are analyzed. The advantages of coblation listed. The test results of cold plasma application on biopsy of muscle tissue with the experimental setup are shown. The paper examines a number of sites for possible use of coblation. The experimental setup for the study and optimization of electrical and technological parameters of coblation method are described.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"79 2-3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132412237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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