S. Voldman, S. Luo, C. Nomura, K. Vannorsdel, N. Feilchenfeld
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引用次数: 11
Abstract
Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.
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