Study and optimization of characteristics of GaN based quantum well light emitting diode

C. Jha, Vikas, S. Pandey
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Abstract

Effect of number of wells with different thicknesses of P layer on Internal Quantum Efficiency(IQE), I–V relationship, Power current, and spontaneous rate of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated and investigated with the help of APSYS software. Result reveals that LED with single Quantum well and thin P type Electron Blocking Layer (EBL) gives significantly good result for low injection level. For high injection level thick EBL and multiple Quantum well gives better result. At low injection level LED with single Quantum well shows IQE around 98.20 %.
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GaN基量子阱发光二极管特性的研究与优化
利用APSYS软件模拟研究了不同P层厚度的阱数对蓝色InGaN/GaN多量子阱(MQW)发光二极管(led)内部量子效率(IQE)、I-V关系、功率电流和自发率的影响。结果表明,单量子阱和薄P型电子阻挡层(EBL)的LED在低注入水平下具有显著的良好效果。对于高注入水平,厚EBL和多量子阱具有较好的效果。在低注入水平下,单量子阱LED的IQE约为98.20%。
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