M. Nafria, J. Diaz-Fortuny, P. Saraza-Canflanca, J. Martín-Martínez, E. Roca, R. Castro-López, R. Rodríguez, P. Martín-Lloret, A. Toro-Frías, D. Mateo, E. Barajas, X. Aragonès, F. Fernández
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引用次数: 1
Abstract
The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.
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