Hongyi Xu, Jiahui Sun, J. Cui, Jiupeng Wu, Hengyu Wang, Shu Yang, Na Ren, Kuang Sheng
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引用次数: 6
Abstract
This paper presents a high-temperature implanted 4H-SiC JBS diode with improved surge capability. The fabrication of the P+ region is implemented with 500 °C implantation. It was found that Ti can form ohmic contact on high temperature implanted P+ region without any additional annealing. This could simplify the ohmic contact process for MPS fabrication. In this work, a wide transition P+ region between cell and termination is designed, which can alleviate snapback phenomenon and improve the surge capability.
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