High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source

P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel
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Abstract

High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.
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利用半导体激光器作为光源的高功率、高速Si和GaAs光开关器件
高功率、高速度、光激活开关仅采用半导体器件,体积小、效率高、成本合理。它们由一个2D激光二极管阵列组成,该阵列激活具有集成光学端口的半导体开关。有几种类型的半导体开关器件是有用的。具有长载流子寿命的Si PIN二极管提供了连续波切换千瓦级射频功率的手段,而脉冲激光二极管阵列只需要几瓦的平均功率。直流偏置,Si PIN二极管也可用于控制高达一兆瓦的功率进入短ns爆发的负载。脉冲偏置砷化镓器件,利用锁定现象,用于控制高达兆瓦的功率进入短ns脉冲负载。本文将对这些类型的交换机进行概述。
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