P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel
{"title":"High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source","authors":"P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel","doi":"10.1109/ELECTR.1991.718180","DOIUrl":null,"url":null,"abstract":"High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electro International, 1991","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTR.1991.718180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.