Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy

Abstract

The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.