High performance 1700V IGBT module with the 7th generation chipset/package technologies

Abstract

This paper describes 1700V IGBT module with the 7th generation (7G) IGBT technologies. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules are significantly improved. In addition, an extra thermal performance of lower thermal impedance is achieved with successful implementation of novel enhanced strength AlN isolation substrate. The integration of new chip and package technologies make it possible to achieve significant increase of watts density of about 30% (11.2kW/cm2 (6G)-> 14.4kW/cm2 (7G)).