M. Easton, R. Basset, D. Day, C. Hua, C. Chang, J. Wei
{"title":"A 3.5 watt high efficiency GaAs FET amplifier for digital telephone communications","authors":"M. Easton, R. Basset, D. Day, C. Hua, C. Chang, J. Wei","doi":"10.1109/MWSYM.1992.188208","DOIUrl":null,"url":null,"abstract":"A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"402 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
