Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564250

M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim

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引用次数: 10

Abstract

The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.

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In和Ga在硒化Cu-In和Cu-Ga前驱体中的扩散

采用Auger深度剖面法研究了Ga和In在CuGaSe/sub - 2/ CuGaSe/sub - 2/ CuGaSe/sub - 2/薄膜扩散对中的相互扩散以及In在CuGaSe/sub - 2/薄膜中的扩散。对顺序沉积的Cu-Ga和Cu-In层进行H/sub 2/Se硒化处理，得到CuGaSe/sub 2/和CuInSe/sub 2/。将CuGaSe/sub 2//CuInSe/sub 2/扩散偶联在650/spl℃氩气气氛中退火30 min。将In薄膜源在氩气气氛中，在400 ~ 600℃的温度范围内扩散到CuGaSe/ sub2 /中，持续30分钟。测定了650℃退火CuGaSe/sub - 2// gase /sub - 2/薄膜中In和Ga的体扩散系数，以及不同温度退火CuGaSe/sub - 2/薄膜中In的扩散系数。In和Ga在650/spl℃扩散对中的相互扩散系数相似(D/sub In/=1.5/spl次/10/sup -11/ cm/sup 2//sec, D/sub Ga/=4.0/spl次/10/sup -11/ cm/sup 2//sec)。在400 ~ 600/spl℃范围内，In在CuGaSe/ sub2 /薄膜中的扩散系数在2.0/spl次/10/sup ~ 13/ cm/sup 2/ sec ~ 4.5/spl次/10/sup ~ 12/ cm/sup 2/ sec之间变化。

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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