{"title":"New modeling technique for memristor devices to cover deviation from memristive theory","authors":"M. G. A. Mohamed, H. Kim, Tae-Won Cho","doi":"10.1109/ELINFOCOM.2014.6914370","DOIUrl":null,"url":null,"abstract":"Behavior of metal-oxide junctions has been addressed as a memristive behavior after 2008. This behavior is not exactly matched with memristive behavior. Extension of memristive theory is needed to match device behavior. In this paper, we present a modeling technique to model these junctions and show how and why their behavior is not exactly memristive behavior. Simulation results verify the proposed model and fit the measurement results.","PeriodicalId":360207,"journal":{"name":"2014 International Conference on Electronics, Information and Communications (ICEIC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Electronics, Information and Communications (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELINFOCOM.2014.6914370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Behavior of metal-oxide junctions has been addressed as a memristive behavior after 2008. This behavior is not exactly matched with memristive behavior. Extension of memristive theory is needed to match device behavior. In this paper, we present a modeling technique to model these junctions and show how and why their behavior is not exactly memristive behavior. Simulation results verify the proposed model and fit the measurement results.
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