Current transport mechanisms of amorphous n-doped silicon carbide/crystalline silicon heterostructure: Impact of nitrogen dopation

Abstract

Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.