A DTMOST-based Temperature Sensor with 3σ Inaccuracy of ±0.9°C for Self-Refresh Control in 28nm Mobile DRAM

Sungsik Park, Yunhong Kim, Woojun Choi, Yongtae Lee, Sungbeen Kim, Youngmin Shin, Youngcheol Chae
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引用次数: 7

Abstract

This paper presents a compact temperature sensor that directly controls a temperature-dependent self-refresh period of a mobile DRAM in 28nm CMOS. It uses a dynamic threshold MOST (DTMOST) as a sensing device that periodically discharges a capacitor. The discharging voltage across the capacitor denotes a supply-independent behavior and the temperature-dependent discharging period of the DTMOST diode is detected by incorporating it into a relaxation oscillator. The sensor occupies only 0.017mm2 and achieves a 3σ inaccuracy of ±0.9°C from -10 to 90°C after 1-point trim. Operating from 0.85 to 1.15V, it shows a low supply sensitivity of 0.27°C/V at room temperature. It consumes 33.75µW and achieves a resolution of 10.2mK. This corresponds to a resolution FoM of 0.36pJ· K2.
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一种基于dtm的温度传感器,3σ误差为±0.9°C,用于28nm移动DRAM的自刷新控制
本文提出了一种紧凑型温度传感器,可直接控制28nm CMOS移动DRAM的温度依赖自刷新周期。它使用动态阈值MOST (DTMOST)作为周期性放电电容器的传感装置。电容上的放电电压与电源无关,DTMOST二极管的温度相关放电周期通过将其并入弛豫振荡器来检测。该传感器仅占地0.017mm2,在-10至90°C范围内,经过1点修整后,其3σ误差为±0.9°C。工作电压范围为0.85至1.15V,室温下电源灵敏度为0.27°C/V。功耗为33.75µW,分辨率为10.2mK。这对应于0.36pJ·K2的分辨率。
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