{"title":"Carbon nanotubes based nanopackaging dedicated to innovative high frequency interconnections","authors":"D. Baillargeat, D. Tan, B. Tay","doi":"10.1109/INEC.2014.7460443","DOIUrl":null,"url":null,"abstract":"Nanoelectronics applications will face limits imposed by physics laws, material properties, circuits and systems characteristics, assembly conditions and many other challenges for achieving Moore and more than Moore Predictions. In this context, packaging is a major problem and will play a crucial role for enabling future nanoelectronics. In this context, Carbon nanotubes (CNTs) are a good candidate for RF interconnects, having better electrical as well as high frequency performance as compared to the conventional metals. In this study, CNTs are considered for high frequency interconnects based on flip-chip bounding. In order to help component design, a modeling approach based on circuit simulation is proposed. Several experimental works will be presented such as flip-chip report based on CNTs bumps and future work.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2014.7460443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Nanoelectronics applications will face limits imposed by physics laws, material properties, circuits and systems characteristics, assembly conditions and many other challenges for achieving Moore and more than Moore Predictions. In this context, packaging is a major problem and will play a crucial role for enabling future nanoelectronics. In this context, Carbon nanotubes (CNTs) are a good candidate for RF interconnects, having better electrical as well as high frequency performance as compared to the conventional metals. In this study, CNTs are considered for high frequency interconnects based on flip-chip bounding. In order to help component design, a modeling approach based on circuit simulation is proposed. Several experimental works will be presented such as flip-chip report based on CNTs bumps and future work.