Geometry Dependent RF Performance of FinFETs

Abstract

Trigate FinFETs are the most promising solutions to short channel effects in the sub 50 nm technology nodes. The analog and RF performance of these devices is an important concern and these depend on the device geometrical parameters. In this paper, we have studied the effect of FinFET geometry parameters (channel length and fin height) on the RF figure of merits by using TCAD simulations. The variation in the cutoff frequency fT, maximum frequency of oscillation fmax and gain bandwidth product (GBW) with the change in gate length and fin height are shown. We found improvement in the RF parameters by decreasing the channel length or increasing the fin height.