T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding
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Abstract
Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising
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