Semi-empirical quantum correction model for electron concentration in symmetric double gate mosfets

Abstract

In this paper, a model for electron distribution in the direction perpendicular to the interface (transverse direction) of a DG-MOSFET is proposed. The model is based on multiplying the classically-calculated electron density by a correction term to account for quantummechanical effects. The correction term is chosen to guarantee zero carrier density at the interface and assumes an effective bandgap widening resulting from splitting of the conduction band into subbands. The model has fitting parameters that were optimized with numerical simulation results. It has continuous derivative and works well over a wide range of gate biases and Si-film thicknesses including both volume and surface inversion regions. Index Terms Quantum correction models; double-gate MOS structures; modeling and simulation