Design and demonstration of large 2.5D glass interposer for high bandwidth applications

T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala
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引用次数: 6

Abstract

In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.
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用于高带宽应用的大型2.5D玻璃中间体的设计和演示
本文展示了一种大型2.5D玻璃中间层,具有50um芯片级互连(FLI), 3/ 3um线路和空间(L/S)逃逸路由,以及针对JEDEC高带宽存储器(HBM)的六层金属层。我们的布线设计表明,3/3 μ m L/S的双面面板加工可以容纳HBM所需的信号线。然后利用半增材工艺在芯厚为300 um的25mm × 30mm玻璃中间层上实现3/ 3um L/S传输线。最后,采用带有SnAg焊锡帽的铜微凸点,将带有菊花链的10mm × 10m模具成功粘合到带有6条金属线的25mm × 30mm玻璃中间层上。
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